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| SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) C B E DEVICE TYPE FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 COMPLEMENT FMMT717 FMMT718 FMMT720 FMMT723 PARTMARKING 617 618 619 624 625 RCE(sat) 50m at 3A 50m at 2A 75m at 2A - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 15 15 5 12 3 20 20 5 6 2.5 50 50 5 6 2 500 625 -55 to +150 125 125 5 3 1 150 150 5 3 1 UNIT V V V A A mA mW C Operating and Storage Temperature Tj:Tstg Range * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 15 15 5 TYP. 70 18 8.2 100 100 100 8 70 150 0.9 0.84 200 300 200 150 80 415 450 320 240 80 120 30 120 160 40 MHz pF ns ns 14 100 200 1.0 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=10V VEB=4V VCES=10V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* IC=3A, IB=50mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz VCC=10V, IC=3A IB1=IB2=50mA Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICES VCE(sat) VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 150 FMMT617 TYPICAL CHARACTERISTICS 1 +25 C 0.4 I+/I*=60 100m 0.3 0.2 10m I+/I*=100 I+/I*=60 I+/I*=10 0.1 0.0 1mA 100C 25C -55C 1m 1m 10m 100m 1 10 10mA 100mA 1A 10A 100A IC - Collector Current (A) Collector Current VCE(SAT) v IC VCE(SAT) vs IC 1.2 1.0 0.8 0.6 0.4 0.2 100C V+-=2V 1.4 450 1.2 1.0 0.8 I+/I*=60 25C -55C 25C 100C -55C 225 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current hFE vs IC 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 -55C 25C 100C VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C V+-=2V 10 1.0 0.1 D.C. 1s 100ms 10ms 1ms 100s 1.0 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 151 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158 |
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